Semiconductor Device and Method of Embedding Thermally Conductive Layer in Interconnect Structure for Heat Dissipation

ABSTRACT

A semiconductor device has a first thermally conductive layer formed over a first surface of a semiconductor die. A second surface of the semiconductor die is mounted to a sacrificial carrier. An encapsulant is deposited over the first thermally conductive layer and sacrificial carrier. The encapsulant is planarized to expose the first thermally conductive layer. A first insulating layer is formed over the second surface of the semiconductor die and a first surface of the encapsulant. A portion of the first insulating layer over the second surface of the semiconductor die is removed. A second thermally conductive layer is formed over the second surface of the semiconductor die within the removed portion of the first insulating layer. An electrically conductive layer is formed within the insulating layer around the second thermally conductive layer. A heat sink can be mounted over the first thermally conductive layer.

CLAIM TO DOMESTIC PRIORITY

The present application is a division of U.S. patent application Ser.No. 12/507,130, filed Jul. 22, 2009, which application is incorporatedherein by reference.

FIELD OF THE INVENTION

The present invention relates in general to semiconductor devices and,more particularly, to a semiconductor device and method of embedding athermally conductive layer in the interconnect structure of the devicefor heat dissipation.

BACKGROUND OF THE INVENTION

Semiconductor devices are commonly found in modern electronic products.Semiconductor devices vary in the number and density of electricalcomponents. Discrete semiconductor devices generally contain one type ofelectrical component, e.g., light emitting diode (LED), small signaltransistor, resistor, capacitor, inductor, and power metal oxidesemiconductor field effect transistor (MOSFET). Integrated semiconductordevices typically contain hundreds to millions of electrical components.Examples of integrated semiconductor devices include microcontrollers,microprocessors, charged-coupled devices (CCDs), solar cells, anddigital micro-mirror devices (DMDs).

Semiconductor devices perform a wide range of functions such ashigh-speed calculations, transmitting and receiving electromagneticsignals, controlling electronic devices, transforming sunlight toelectricity, and creating visual projections for television displays.Semiconductor devices are found in the fields of entertainment,communications, power conversion, networks, computers, and consumerproducts. Semiconductor devices are also found in military applications,aviation, automotive, industrial controllers, and office equipment.

Semiconductor devices exploit the electrical properties of semiconductormaterials. The atomic structure of semiconductor material allows itselectrical conductivity to be manipulated by the application of anelectric field or base current or through the process of doping. Dopingintroduces impurities into the semiconductor material to manipulate andcontrol the conductivity of the semiconductor device.

A semiconductor device contains active and passive electricalstructures. Active structures, including bipolar and field effecttransistors, control the flow of electrical current. By varying levelsof doping and application of an electric field or base current, thetransistor either promotes or restricts the flow of electrical current.Passive structures, including resistors, capacitors, and inductors,create a relationship between voltage and current necessary to perform avariety of electrical functions. The passive and active structures areelectrically connected to form circuits, which enable the semiconductordevice to perform high-speed calculations and other useful functions.

Semiconductor devices are generally manufactured using two complexmanufacturing processes, i.e., front-end manufacturing, and back-endmanufacturing, each involving potentially hundreds of steps. Front-endmanufacturing involves the formation of a plurality of die on thesurface of a semiconductor wafer. Each die is typically identical andcontains circuits formed by electrically connecting active and passivecomponents. Back-end manufacturing involves singulating individual diefrom the finished wafer and packaging the die to provide structuralsupport and environmental isolation.

One goal of semiconductor manufacturing is to produce smallersemiconductor devices. Smaller devices typically consume less power,have higher performance, and can be produced more efficiently. Inaddition, smaller semiconductor devices have a smaller footprint, whichis desirable for smaller end products. A smaller die size may beachieved by improvements in the front-end process resulting in die withsmaller, higher density active and passive components. Back-endprocesses may result in semiconductor device packages with a smallerfootprint by improvements in electrical interconnection and packagingmaterials.

Another goal of semiconductor manufacturing is to produce higherperformance semiconductor devices. An increase in device performance canbe accomplished by forming active components that are capable ofoperating at higher speeds. In some high-performance semiconductordevices, a large number of digital circuits operate with a highfrequency clock, e.g., a microprocessor operating in gigahertz range. Inother high frequency applications, such as radio frequency (RF) wirelesscommunications, integrated passive devices (IPDs) are often containedwithin the semiconductor device. Examples of IPDs include resistors,capacitors, and inductors. A typical RF system requires multiple IPDs inone or more semiconductor packages to perform the necessary electricalfunctions.

These high-performance semiconductor devices generate significant heatwhich must be adequately dissipated. Some semiconductor packages use theencapsulant or build-up interconnect structures to dissipate heat.However, encapsulant or build-up interconnect structures are typicallypoor thermal conductors. Without effective heat dissipation, thegenerated heat can reduce performance, decrease reliability, and reducethe useful lifetime of the semiconductor device. In addition, warpagedue to differential thermal expansion coefficient between thesemiconductor die and build-up interconnect structures can cause diestress and delamination.

SUMMARY OF THE INVENTION

A need exists to adequately dissipate heat in semiconductor devices.Accordingly, in one embodiment, the present invention is a semiconductordevice comprising a semiconductor die and first thermally conductivelayer formed over a first surface of the semiconductor die. Anencapsulant is deposited around the semiconductor die. A secondthermally conductive layer is formed over a second surface of thesemiconductor die opposite the first surface of the semiconductor die. Afirst interconnect structure is formed over a first surface of theencapsulant.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor component and first thermallyconductive layer formed over a first surface of the first semiconductorcomponent. An encapsulant is deposited around the first semiconductorcomponent. A first interconnect structure is formed over a first surfaceof the encapsulant.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor component and first thermallyconductive layer formed over a first surface of the first semiconductorcomponent. A first interconnect structure is formed over a secondsurface of the first semiconductor component opposite the first surfaceof the first semiconductor component.

In another embodiment, the present invention is a semiconductor devicecomprising a first semiconductor component and first thermallyconductive layer formed over a first surface of the first semiconductorcomponent. A second thermally conductive layer is formed over a secondsurface of the first semiconductor component opposite the first surfaceof the first semiconductor component.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a printed circuit board (PCB) with different types ofpackages mounted to its surface;

FIGS. 2 a-2 c illustrate further detail of the representativesemiconductor packages mounted to the PCB;

FIGS. 3 a-3 k illustrate a process of forming thermally conductivelayers over both sides of the semiconductor die;

FIG. 4 illustrates the FO-WLCSP with thermally conductive layers formedover both sides of the die;

FIG. 5 illustrates the FO-WLCSP with the thermally conductive layerformed partially through the build-up interconnect structure;

FIG. 6 illustrates the FO-WLCSP with the thermally conductive layersinterconnected with TSVs;

FIG. 7 illustrates the FO-WLCSP with an additional thermally conductivelayer formed under the die;

FIG. 8 illustrates the FO-WLCSP with topside build-up interconnectstructure and thermally conductive layer;

FIG. 9 illustrates back-to-back semiconductor die mated through thethermally conductive layers; and

FIG. 10 illustrates the FO-WLCSP with a heat sink formed over thethermally conductive layer.

DETAILED DESCRIPTION OF THE DRAWINGS

The present invention is described in one or more embodiments in thefollowing description with reference to the figures, in which likenumerals represent the same or similar elements. While the invention isdescribed in terms of the best mode for achieving the invention'sobjectives, it will be appreciated by those skilled in the art that itis intended to cover alternatives, modifications, and equivalents as maybe included within the spirit and scope of the invention as defined bythe appended claims and their equivalents as supported by the followingdisclosure and drawings.

Semiconductor devices are generally manufactured using two complexmanufacturing processes: front-end manufacturing and back-endmanufacturing. Front-end manufacturing involves the formation of aplurality of die on the surface of a semiconductor wafer. Each die onthe wafer contains active and passive electrical components, which areelectrically connected to form functional electrical circuits. Activeelectrical components, such as transistors and diodes, have the abilityto control the flow of electrical current. Passive electricalcomponents, such as capacitors, inductors, resistors, and transformers,create a relationship between voltage and current necessary to performelectrical circuit functions.

Passive and active components are formed over the surface of thesemiconductor wafer by a series of process steps including doping,deposition, photolithography, etching, and planarization. Dopingintroduces impurities into the semiconductor material by techniques suchas ion implantation or thermal diffusion. The doping process modifiesthe electrical conductivity of semiconductor material in active devices,transforming the semiconductor material into an insulator, conductor, ordynamically changing the semiconductor material conductivity in responseto an electric field or base current. Transistors contain regions ofvarying types and degrees of doping arranged as necessary to enable thetransistor to promote or restrict the flow of electrical current uponthe application of the electric field or base current.

Active and passive components are formed by layers of materials withdifferent electrical properties. The layers can be formed by a varietyof deposition techniques determined in part by the type of materialbeing deposited. For example, thin film deposition may involve chemicalvapor deposition (CVD), physical vapor deposition (PVD), electrolyticplating, and electroless plating processes. Each layer is generallypatterned to form portions of active components, passive components, orelectrical connections between components.

The layers can be patterned using photolithography, which involves thedeposition of light sensitive material, e.g., photoresist, over thelayer to be patterned. A pattern is transferred from a photomask to thephotoresist using light. The portion of the photoresist patternsubjected to light is removed using a solvent, exposing portions of theunderlying layer to be patterned. The remainder of the photoresist isremoved, leaving behind a patterned layer. Alternatively, some types ofmaterials are patterned by directly depositing the material into theareas or voids formed by a previous deposition/etch process usingtechniques such as electroless and electrolytic plating.

Depositing a thin film of material over an existing pattern canexaggerate the underlying pattern and create a non-uniformly flatsurface. A uniformly flat surface is required to produce smaller andmore densely packed active and passive components. Planarization can beused to remove material from the surface of the wafer and produce auniformly flat surface. Planarization involves polishing the surface ofthe wafer with a polishing pad. An abrasive material and corrosivechemical are added to the surface of the wafer during polishing. Thecombined mechanical action of the abrasive and corrosive action of thechemical removes any irregular topography, resulting in a uniformly flatsurface.

Back-end manufacturing refers to cutting or singulating the finishedwafer into the individual die and then packaging the die for structuralsupport and environmental isolation. To singulate the die, the wafer isscored and broken along non-functional regions of the wafer called sawstreets or scribes. The wafer is singulated using a laser cutting toolor saw blade. After singulation, the individual die are mounted to apackage substrate that includes pins or contact pads for interconnectionwith other system components. Contact pads formed over the semiconductordie are then connected to contact pads within the package. Theelectrical connections can be made with solder bumps, stud bumps,conductive paste, or wirebonds. An encapsulant or other molding materialis deposited over the package to provide physical support and electricalisolation. The finished package is then inserted into an electricalsystem and the functionality of the semiconductor device is madeavailable to the other system components.

FIG. 1 illustrates electronic device 10 having a chip carrier substrateor printed circuit board (PCB) 12 with a plurality of semiconductorpackages mounted on its surface. Electronic device 10 may have one typeof semiconductor package, or multiple types of semiconductor packages,depending on the application. The different types of semiconductorpackages are shown in FIG. 1 for purposes of illustration.

Electronic device 10 may be a stand-alone system that uses thesemiconductor packages to perform one or more electrical functions.Alternatively, electronic device 10 may be a subcomponent of a largersystem. For example, electronic device 10 may be a graphics card,network interface card, or other signal processing card that can beinserted into a computer. The semiconductor package can includemicroprocessors, memories, application specific integrated circuits(ASIC), logic circuits, analog circuits, RF circuits, discrete devices,or other semiconductor die or electrical components.

In FIG. 1, PCB 12 provides a general substrate for structural supportand electrical interconnect of the semiconductor packages mounted on thePCB. Conductive signal traces 14 are formed over a surface or withinlayers of PCB 12 using evaporation, electrolytic plating, electrolessplating, screen printing, or other suitable metal deposition process.Signal traces 14 provide for electrical communication between each ofthe semiconductor packages, mounted components, and other externalsystem components. Traces 14 also provide power and ground connectionsto each of the semiconductor packages.

In some embodiments, a semiconductor device has two packaging levels.First level packaging is a technique for mechanically and electricallyattaching the semiconductor die to an intermediate carrier. Second levelpackaging involves mechanically and electrically attaching theintermediate carrier to the PCB. In other embodiments, a semiconductordevice may only have the first level packaging where the die ismechanically and electrically mounted directly to the PCB.

For the purpose of illustration, several types of first level packaging,including wire bond package 16 and flip chip 18, are shown on PCB 12.Additionally, several types of second level packaging, including ballgrid array (BGA) 20, bump chip carrier (BCC) 22, dual in-line package(DIP) 24, land grid array (LGA) 26, multi-chip module (MCM) 28, quadflat non-leaded package (QFN) 30, and quad flat package 32, are shownmounted on PCB 12. Depending upon the system requirements, anycombination of semiconductor packages, configured with any combinationof first and second level packaging styles, as well as other electroniccomponents, can be connected to PCB 12. In some embodiments, electronicdevice 10 includes a single attached semiconductor package, while otherembodiments call for multiple interconnected packages. By combining oneor more semiconductor packages over a single substrate, manufacturerscan incorporate pre-made components into electronic devices and systems.Because the semiconductor packages include sophisticated functionality,electronic devices can be manufactured using cheaper components and astreamlined manufacturing process. The resulting devices are less likelyto fail and less expensive to manufacture resulting in a lower cost forconsumers.

FIGS. 2 a-2 c show exemplary semiconductor packages. FIG. 2 aillustrates further detail of DIP 24 mounted on PCB 12. Semiconductordie 34 includes an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and are electricallyinterconnected according to the electrical design of the die. Forexample, the circuit may include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements formedwithin the active region of semiconductor die 34. Contact pads 36 areone or more layers of conductive material, such as aluminum (Al), copper(Cu), tin (Sn), nickel (Ni), gold (Au), or silver (Ag), and areelectrically connected to the circuit elements formed withinsemiconductor die 34. During assembly of DIP 24, semiconductor die 34 ismounted to an intermediate carrier 38 using a gold-silicon eutecticlayer or adhesive material such as thermal epoxy. The package bodyincludes an insulative packaging material such as polymer or ceramic.Conductor leads 40 and wire bonds 42 provide electrical interconnectbetween semiconductor die 34 and PCB 12. Encapsulant 44 is depositedover the package for environmental protection by preventing moisture andparticles from entering the package and contaminating die 34 or wirebonds 42.

FIG. 2 b illustrates further detail of BCC 22 mounted on PCB 12.Semiconductor die 48 is mounted over carrier 50 using an underfill orepoxy-resin adhesive material 52. Wire bonds 54 provide first levelpacking interconnect between contact pads 56 and 58. Molding compound orencapsulant 60 is deposited over semiconductor die 48 and wire bonds 54to provide physical support and electrical isolation for the device.Contact pads 62 are formed over a surface of PCB 12 using a suitablemetal deposition such electrolytic plating or electroless plating toprevent oxidation. Contact pads 62 are electrically connected to one ormore conductive signal traces 14 in PCB 12. Bumps 64 are formed betweencontact pads 58 of BCC 22 and contact pads 62 of PCB 12.

In FIG. 2 c, semiconductor die 18 is mounted face down to intermediatecarrier 66 with a flip chip style first level packaging. Active region68 of semiconductor die 18 contains analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed according to the electrical design of the die.For example, the circuit may include one or more transistors, diodes,inductors, capacitors, resistors, and other circuit elements withinactive region 68. Semiconductor die 18 is electrically and mechanicallyconnected to carrier 66 through bumps 70.

BGA 20 is electrically and mechanically connected to PCB 12 with a BGAstyle second level packaging using bumps 72. Semiconductor die 18 iselectrically connected to conductive signal traces 14 in PCB 12 throughbumps 70, signal lines 74, and bumps 72. A molding compound orencapsulant 76 is deposited over semiconductor die 18 and carrier 66 toprovide physical support and electrical isolation for the device. Theflip chip semiconductor device provides a short electrical conductionpath from the active devices on semiconductor die 18 to conductiontracks on PCB 12 in order to reduce signal propagation distance, lowercapacitance, and improve overall circuit performance. In anotherembodiment, the semiconductor die 18 can be mechanically andelectrically connected directly to PCB 12 using flip chip style firstlevel packaging without intermediate carrier 66.

FIGS. 3 a-3 k illustrate a process of forming a fan-out wafer level chipscale package (FO-WLCSP) with thermally conductive layers formed over abackside of the die and within the interconnect structure for heatdissipation. FIG. 3 a shows a semiconductor wafer 100 containing aplurality of semiconductor die 102 formed using the integrated circuitprocesses described above. Semiconductor die 102 each include asubstrate with an active region containing analog or digital circuitsimplemented as active devices, passive devices, conductive layers, anddielectric layers formed within the die and electrically interconnectedaccording to the electrical design and function of the die. For example,the circuit may include one or more transistors, diodes, and othercircuit elements formed within its active surface to implement basebandanalog circuits or digital circuits, such as digital signal processor(DSP), memory, or other signal processing circuit.

Semiconductor die 102 may also contain integrated passive devices (IPD),such as inductors, capacitors, and resistors, for radio frequency (RF)signal processing. The IPDs provide electrical characteristics neededfor high frequency applications, such as resonators, high-pass filters,low-pass filters, band-pass filters, symmetric Hi-Q resonanttransformers, matching networks, and tuning capacitors. The IPDs can beused as front-end wireless RF components, which can be positionedbetween the antenna and transceiver. The IPD inductor can be a hi-Qbalun, transformer, or coil, operating up to 100 Gigahertz. In someapplications, multiple baluns are formed over a same substrate, allowingmulti-band operation. For example, two or more baluns are used in aquad-band for mobile phones or other global system for mobile (GSM)communications, each balun dedicated for a frequency band of operationof the quad-band device. A typical RF system requires multiple IPDs andother high frequency circuits in one or more semiconductor packages toperform the necessary electrical functions.

Semiconductor die 102 inherently generates heat during normal operationwhich must be properly dissipated. In FIG. 3 b, a thermally conductivelayer 104 is formed over a surface of semiconductor wafer 100 using ablanket deposition process, prior to singulation. Thermally conductivelayer 104 can be Cu, Al, Au, Ag, or other material with thermal fillerssuch as alumina (Al203), zinc oxide (ZnO), Ag, or aluminum nitride(A1N). For example, thermally conductive layer 104 can be a thermal gelsuch as silicone with appropriate thermal filler. Thermally conductivelayer 104 is characterized by a low coefficient of thermal expansion(CTE) (5-15 ppm/° C.) and high thermal conductivity ranging from400-1400 W/m-K. After singulation, semiconductor 102 each have athermally conductive layer 104 formed over a backside of the die, asshown in FIG. 3 c.

In FIG. 3 d, a sacrificial wafer-form substrate or carrier 106 containsdummy or sacrificial base material such as silicon, polymer, polymercomposite, metal, ceramic, glass, glass epoxy, beryllium oxide, or othersuitable low-cost, rigid material or bulk semiconductor material forstructural support. An optional interface layer can be formed overcarrier 106 as a temporary bonding film or etch-stop layer.

In FIG. 3 e, semiconductor die 102, with thermally conductive layer 104formed on its backside, are mounted over carrier 106 with contact pads110 and active surface 111 oriented toward the carrier. In anotherembodiment, thermally conductive layer is formed over the backside ofsemiconductor die 102 after mounting to carrier 106. A discretecomponent can also be mounted over carrier 106.

FIG. 3 f shows a molding compound or other suitable encapsulant 112deposited over carrier 106 and semiconductor die 102 using a pasteprinting, compressive molding, transfer molding, liquid encapsulantmolding, vacuum lamination, or other suitable applicator. Encapsulant112 can be polymer composite material, such as epoxy resin with filler,epoxy acrylate with filler, or polymer with proper filler. Encapsulant112 is non-conductive and environmentally protects the semiconductordevice from external elements and contaminants.

A grinder 114 removes a portion of encapsulant 112 to create a planarsurface and expose thermally conductive layer 104, as shown in FIG. 3 g.Encapsulant 112 can be removed by chemical cleaning, chemical etching,mechanical peel-off, or CMP. Alternatively, the volume deposition ofencapsulant 112 is controlled to a thickness that covers semiconductordie 102 while exposing thermally conductive layer 106.

In FIG. 3 h, carrier 106 and optional interface layer are removed bychemical cleaning, chemical etching, mechanical peel-off, CMP,mechanical grinding, thermal bake, laser scanning, or wet stripping.

In FIG. 3 i, the assembly is inverted and a bottom-side build-upinterconnect structure 116 is formed over encapsulant 112 and activesurface 111 of semiconductor die 102. The build-up interconnectstructure 116 includes an insulating or dielectric layer 118 containingone or more layers of silicon dioxide (SiO2), silicon nitride (Si3N4),silicon oxynitride (SiON), tantalum pentoxide (Ta2O5), aluminum oxide(Al2O3), or other material having similar insulating properties. Theinsulating layers 118 are formed using PVD, CVD, printing, spin coating,spray coating, sintering with curing, or thermal oxidation.

A portion of insulating layer 118 is removed by an etching process toexpose active surface 111 of semiconductor die 102. A thin dielectriclayer 120 is formed over active surface 111 in the removed portion ofinsulating layer 118 to isolate active surface 111. Alternately, a thinlayer of insulating material 118 remains over active surface 111 afterthe etching process to isolate active surface 111. A thermallyconductive layer 122 is formed as one or more layers over dielectriclayer 120 (or insulating layer 118) using a patterning and depositionprocess. Thermally conductive layer 122 can be Cu, Al, Ag, Au, or othermaterial with thermal fillers such as Al2O3, ZnO, Ag, or AlN. Forexample, thermally conductive layer 122 can be a thermal gel such assilicone with appropriate thermal filler. Thermally conductive layer 122is characterized by a low CTE (5-15 ppm/° C.) and high thermalconductivity ranging from 400-1400 W/m-K. Thermally conductive layer 122covers a substantial area of semiconductor die 102. The large mass ofthermally conductive layer reduces die warpage.

The build-up interconnect structure 116 further includes an electricallyconductive layer 124 formed in insulating layer 118 around thermallyconductive layer 122 using patterning with PVD, CVD, sputtering,electrolytic plating, electroless plating process, or other suitablemetal deposition process. Conductive layer 124 can be one or more layersof Al, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. Conductive layer 124 can be formed simultaneously withthermally conductive layer 122. One portion of conductive layer 124electrically connects to contact pads 110. Other portions of conductivelayer 124 can be electrically common or electrically isolated dependingon the design and function of semiconductor device 102.

In another embodiment, insulating layer 120 and thermally conductivelayer 122 are formed over active surface 111 of semiconductor die 102while in wafer form, i.e., prior to wafer singulation. In this case,build-up interconnect structure 116 is formed around thermallyconductive layer 122, as shown in FIG. 3 i.

In FIG. 3 j, an electrically conductive bump material is deposited overconductive layer 124 and thermally conductive layer 122 using anevaporation, electrolytic plating, electroless plating, ball drop, orscreen printing process. The bump material can be Al, Sn, Ni, Au, Ag,Pb, Bi, Cu, solder, and combinations thereof, with an optional fluxsolution. For example, the bump material can be eutectic Sn/Pb,high-lead solder, or lead-free solder. The bump material is bonded toconductive layer 124 and thermally conductive layer 122 using a suitableattachment or bonding process. In one embodiment, the bump material isreflowed by heating the material above its melting point to formspherical balls or bumps 126. Solder bumps 126 a are formed onconductive layer 124 to route electrical signals through build-upinterconnect structure 116 to contact pads 110 of semiconductor die 102.Solder bumps 126 b are formed on thermally conductive layer 122 andoperate as a thermal conductor to dissipate heat generated bysemiconductor die 102. In some applications, bumps 126 are reflowed asecond time to improve electrical contact to conductive layer 124 andthermally conductive layer 122. The bumps can also be compression bondedto conductive layer 124 and thermally conductive layer 122. Bumps 126represent one type of interconnect structure that can be formed overconductive layer 124 and thermally conductive layer 122. Theinterconnect structure can also use bond wires, stud bump, micro bump,or other electrical interconnect.

Semiconductor die 102 are singulated with saw blade or laser cuttingdevice 128 into individual semiconductor devices 130, as shown in FIG. 3k. FIG. 4 shows semiconductor package 130 after singulation. Thermallyconductive layers 104 and 122 provide effective dual-side heatdissipation, which is particularly suitable for high performancesemiconductor devices. Manufacturing costs are reduced by formingthermal conductive layer 104 at wafer level stage and by forming thermalconductive layer 122 simultaneously with build-up interconnect structure116. Thermally conductive layers 104 and 122 also provide shieldingagainst electromagnetic interference (EMI), radio frequency interference(RFI), and other inter-device interference. Thermally conductive layer124 may extend through all layers of build-up interconnect structure116, or partially through the interconnect structure, as shown in FIG.5.

FIG. 6 shows an embodiment with through silicon vias (TSV) 132 formedthrough semiconductor die 102 by etching or drilling a via through thesilicon material and filling the via with Al, Cu, Sn, Ni, Au, Ag,titanium (Ti), W, poly-silicon, or other suitable electricallyconductive material. TSVs 132 a are formed between contact pads 110 andthermally conductive layer 104 and operate as a thermal conductor todissipate heat generated by semiconductor die 102. TSVs 132 b are formedbetween thermally conductive layers 104 and 122 and operate as a thermalconductor to dissipate heat generated by semiconductor die 102.

FIG. 7 shows an embodiment with conductive bumps 134 formed betweencontact pads 110 of semiconductor die 102 and build-up interconnectstructure 116. Conductive bumps 134 provide spacing to form anadditional thermally conductive layer 136 between active surface 111 ofsemiconductor die 102 and thermally conductive layer 122. Thermallyconductive layer 136 improves heat dissipation away from semiconductordie 102.

In FIG. 8, conductive through hole vias 140 are formed by etching ordrilling a via through encapsulant 112 and filling the via with Al, Cu,Sn, Ni, Au, Ag, titanium (Ti), W, poly-silicon, or other suitableelectrically conductive material. A topside build-up interconnectstructure 144 is formed over encapsulant 112 and thermally conductivelayer 104. Conductive THVs 140 function as vertical (z-direction)interconnects extending from one side of encapsulant 112 to an oppositeside of the encapsulant and electrically connect build-up interconnectstructures 116 and 144. The build-up interconnect structure 144 includesan insulating or dielectric layer 146 containing one or more layers ofSiO2, Si3N4, SiON, Ta2O5,Al2O3, or other material having similarinsulating properties. The insulating layers 146 are formed using PVD,CVD, printing, spin coating, spray coating, sintering with curing, orthermal oxidation.

A portion of insulating layer 146 is removed by an etching process toexpose thermally conductive layer 104. A thermally conductive layer 148is formed as one or more layers over thermally conductive layer 104using a patterning and deposition process. Thermally conductive layer148 can be Cu, Al, Ag, Au, or other material with thermal fillers suchas Al2O3, ZnO, Ag, or AlN. For example, thermally conductive layer 144can be a thermal gel such as silicone with appropriate thermal filler.Thermally conductive layer 148 is characterized by a low CTE (5-15 ppm/°C.) and high thermal conductivity ranging from 400-1400 W/m-K.

The build-up interconnect structure 144 further includes an electricallyconductive layer 150 formed in insulating layer 146 around thermallyconductive layer 148 using patterning with PVD, CVD, sputtering,electrolytic plating, electroless plating process, or other suitablemetal deposition process. Conductive layer 150 can be one or more layersof Al, Cu, Sn, Ni, Au, Ag, or other suitable electrically conductivematerial. Conductive layer 150 can be formed simultaneously withthermally conductive layer 148. One portion of conductive layer 150electrically connects to conductive THVs 140. Other portions ofconductive layer 150 can be electrically common or electrically isolateddepending on the design and function of semiconductor device 102.

FIG. 9 shows an embodiment similar to FIG. 8 showing the additionalfeature that semiconductor die 102 are mounted back-to-back by matingthermally conductive layer 104 of each semiconductor die.

FIG. 10 shows an embodiment with heat sink 152 mounted over thermallyconductive layer 104 and encapsulant 112. Heat sink 152 extends throughencapsulant 112 to build-up interconnect structure 116. Heat sink 152provides heat dissipation for the device.

While one or more embodiments of the present invention have beenillustrated in detail, the skilled artisan will appreciate thatmodifications and adaptations to those embodiments may be made withoutdeparting from the scope of the present invention as set forth in thefollowing claims.

1. A semiconductor device, comprising: a semiconductor die; a firstthermally conductive layer formed over a first surface of thesemiconductor die; an encapsulant deposited around the semiconductordie; a second thermally conductive layer formed over a second surface ofthe semiconductor die opposite the first surface of the semiconductordie; and a first interconnect structure formed over a first surface ofthe encapsulant.
 2. The semiconductor device of claim 1, wherein thefirst interconnect structure includes: an insulating layer formed overthe first surface of the encapsulant; and a conductive layer formed overthe first surface of the encapsulant.
 3. The semiconductor device ofclaim 1, further including a conductive via formed through thesemiconductor die between the first thermally conductive layer andsecond thermally conductive layer.
 4. The semiconductor device of claim1, further including: a second interconnect structure formed over asecond surface of the encapsulant opposite the first surface of theencapsulant; and a conductive via formed through the encapsulant betweenthe first interconnect structure and second interconnect structure. 5.The semiconductor device of claim 1, further including a conductive bumpformed between the semiconductor die and first interconnect structure.6. The semiconductor device of claim 1, further including a heat sinkmounted over the semiconductor die.
 7. A semiconductor device,comprising: a first semiconductor component; a first thermallyconductive layer formed over a first surface of the first semiconductorcomponent; an encapsulant deposited around the first semiconductorcomponent; and a first interconnect structure formed over a firstsurface of the encapsulant.
 8. The semiconductor device of claim 7,further including a second thermally conductive layer formed over asecond surface of the first semiconductor component opposite the firstsurface of the first semiconductor component.
 9. The semiconductordevice of claim 7, further including a conductive via formed through thefirst semiconductor component.
 10. The semiconductor device of claim 7,further including a second interconnect structure formed over a secondsurface of the encapsulant opposite the first surface of theencapsulant.
 11. The semiconductor device of claim 7, further includinga third thermally conductive layer formed over the first thermallyconductive layer.
 12. The semiconductor device of claim 7, furtherincluding a second semiconductor component mounted to the firstthermally conductive layer opposite the first semiconductor component.13. The semiconductor device of claim 12, further including a thirdthermally conductive layer formed over the second semiconductorcomponent.
 14. A semiconductor device, comprising: a first semiconductorcomponent; a first thermally conductive layer formed over a firstsurface of the first semiconductor component; and a first interconnectstructure formed over a second surface of the first semiconductorcomponent opposite the first surface of the first semiconductorcomponent.
 15. The semiconductor device of claim 14, further includingan encapsulant deposited around the first semiconductor component. 16.The semiconductor device of claim 14, further including a secondthermally conductive layer formed over the second surface of the firstsemiconductor component.
 17. The semiconductor device of claim 14,further including a conductive via formed through the firstsemiconductor component.
 18. The semiconductor device of claim 14,further including a second interconnect structure formed over the firstsurface of the semiconductor component.
 19. The semiconductor device ofclaim 14, further including a second semiconductor component mounted tothe first thermally conductive layer opposite the first semiconductorcomponent.
 20. The semiconductor device of claim 14, further including aheat sink mounted over the first semiconductor component.
 21. Asemiconductor device, comprising: a first semiconductor component; afirst thermally conductive layer formed over a first surface of thefirst semiconductor component; and a second thermally conductive layerformed over a second surface of the first semiconductor componentopposite the first surface of the first semiconductor component.
 22. Thesemiconductor device of claim 21, further including an encapsulantdeposited around the first semiconductor component.
 23. Thesemiconductor device of claim 21, further including an interconnectstructure formed over the first surface or the second surface of thefirst semiconductor component.
 24. The semiconductor device of claim 21,further including a conductive via formed through the firstsemiconductor component between the first thermally conductive layer andsecond thermally conductive layer.
 25. The semiconductor device of claim21, further including a second semiconductor component mounted to thefirst thermally conductive layer opposite the first semiconductorcomponent.